O circuito lógico TTL é um dispositivo TTL que possui quatro portas lógicas AND de duas entradas cada porta. Ele é usado, principalmente, em circuitos. jpg ( × pixels, file size: 15 KB, MIME type: image/jpeg). Open in Media English: chip Date, 14 Circuito integrado Utilice dos CI y un CI Contador decimal Esto se hace iniciando el circuito con cada uno de los seis estados no utilizados mediante las entradas de .

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Q terminal is 3 volts. B are at opposite logic levels.

The Betas are about the same. The variations for Alpha and Beta for the tested transistor are not really significant, resulting in an almost ideal current source which is independent of the voltage VCE. The results agree within 1.

Clampers R, C, Diode Combination b. This publication is protected by Copyright and permission should be obtained from the publisher prior to any prohibited reproduction, storage in a retrieval system, or transmission in any form or by any means, electronic, mechanical, photocopying, recording, or likewise. Solution is network of Fig.

CLK terminal is 3.

The majority carrier is the electron while the minority carrier is the hole. Replace R1 with 20 Kohm resistor. The frequency at the U2A: For a p-channel JFET, all the voltage polarities in the network are reversed as compared to an n-channel device. The leakage current ICO is the minority carrier current in the collector. However, vo is connected directly through the 2. IF as shown in Fig. The logic state of the output terminal U3A: Vin is swept linearly from 2 V to 8 V in 1 V increments.


From problem 14 b: Refer to the data in Table In general, as IG decreases, the blocking voltage required for conduction increases. The magnitude of the Beta of a transistor is a property of the device, not of the circuit. For the current case, the propagation delay at the lagging edge of the applied TTL pulse should be identical to that at the leading edge of that pulse.

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Therefore, relative to the diode current, the diode has a positive temperature coefficient. Computer Simulation Table a. We note that the voltages VC1 and VB2 are not the same as they would be if the voltage across capacitor CC was 0 Volts, indicating a short circuit ckrcuito that capacitor. It is essentially the reverse saturation leakage current of the diode, comprised mainly of minority carriers.

Y its output trace. Given the tolerances of electronic circuit due to their components and that of the Darlington chip, the results are quite satisfactory.

The effect was a reduction in the dc level of the output voltage. The logic states of the simulation and those experimentally determined are identical. Circuitl the stability figures of both of those circuits are so small, the apparent greater stability of the collector feedback cicuito without RE is probably the result of measurement variability. Help Center Find new research papers in: Z1 forward-biased at 0. Experimental Determination of Logic States a.


The majority carrier is the hole while the minority carrier is the electron. The fact that the outermost shell with its 29th electron is incomplete subshell can contain 2 electrons and distant from the nucleus reveals that this electron is loosely bound to its parent atom. The levels are higher for hfe but note that VCE is higher also. Both intrinsic silicon and germanium have complete outer shells due to the sharing covalent bonding of electrons between atoms.

Darlington Input and Output Impedance a. Thus, there should not be much of a change in the voltage and current levels if the transistors are interchanged. Y of the U2A gate. High Frequency Response Calculations a.

Zener Diode Regulation icrcuito.

Circuito integrado 7408

B are the inputs to the gate, U1A: Otherwise, its output is at a logical LOW. Multiple Current Mirrors a. This is equal to the period of the wave. For reverse-bias potentials in excess of 10 V the capacitance levels off at about 1. See above circuit circiuto. Build and Test CE Circuit b.